Subject Area and Category
Publication type
Conferences and Proceedings
Scope
It is with great pleasure that I invite you to be a part of the 2015 IEEE Compound Semiconductor IC
Symposium (CSICS). Thanks to the efforts of the many dedicated volunteers on the organizing committee
and the generous support of the IEEE Electron Devices, Microwave Theory and Techniques, and SolidState Circuits Societies, CSICS is proud to offer a world class technical program. For this 37th edition,
CSICS will be held on October 11-14 in New Orleans, Louisiana.
From its origins in 1978 as an international gathering for distinguished experts to present their latest
results in GaAs IC technology and Monolithic Microwave Integrated Circuit design, the symposium has
become much more and now embraces GaN, InP, SiGe, nanoscale CMOS, and many other emerging
technologies. This convergence allows CSICS to offer a perfect blend of state of the art IC performance,
innovative design techniques, and advanced device technologies. There are no other events in the world
where you can see GaN HPAs, InP THz PAs, 100 Gb/s CMOS/SiGe transceivers, GaN HEMT power
devices, and advances in compact modeling all presented alongside each other.
Following its tradition, CSICS will include presentations from worldwide submissions on all aspects of
the technology, from materials and device fabrication and modeling to IC design and testing, high-volume
manufacturing, and system applications. It will also feature the very latest results in RF/microwave,
millimeter-wave, THz, analog mixed signal, and optoelectronic integrated circuits.
On Sunday prior to the symposium opening, CSICS will offer topical short and primer courses. Taught
by leading experts, the short courses are intended for both technologists and IC designers who seek a
comprehensive understanding of the latest industry trends and techniques. The primer courses are
intended to be tutorials, introducing the key concepts, techniques and practices for Si mixed signal and RF
circuit design.